| PART |
Description |
Maker |
| MTM8N60 MTH8N60 MTH8N55 |
(MTH8N55 / MTH8N60) Power Field Effect Transistor
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
|
MOTOROLA INC
MOTOROLA[Motorola, Inc]
Motorola Semiconductor
Motorola, Inc.
|
| RFH35N10 RFH35N08 |
POWER MOS FIELD - EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| IRFF110 IRFF111 IRFF112 IRFF113 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS Field-Effect Transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
|
General Electric Solid State
GE Solid State
|
| SSM3J13T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch High Speed Switching Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| MRF5S21045NR1 |
RF Power Field Effect Transistors
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MRF5S21090HSR3 MRF5S21090HR3 MRF5S21090HR3_06 MRF5 |
RF Power Field Effect Transistors
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MRF8S8260HR3 MRF8S8260HSR3 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
| MRF1535NT106 MRF1535NT1 MRF1535FNT1 |
RF Power Field Effect Transistors
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MRF21045 MRF21045LR3 MRF21045LSR3 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
| MRF6S9125NR1 |
RF Power Field Effect Transistors
|
Freescale Semiconductor...
|
| MRF7S16150HR3 |
RF Power Field Effect Transistors
|
Freescale Semiconductor
|
| MRF7S21170HR312 MRF7S21170HSR3 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
Freescale Semiconductor...
|
